2sk3707 no.7706-1/7 features ? on-resistance r ds (on)1=45m (typ.) ? input capacitance ciss=2150pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 100 v gate-to-source voltage v gss 20 v drain current (dc) i d 20 a drain current (pulse) i dp pw 10 s, duty cycle 1% 80 a allowable power dissipation p d 2.0 w tc=25 c 25 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 125 mj avalanche current *2 i av 20 a note : * 1 v dd =20v, l=500 h, i av =20a (fig.1) * 2 l 500 h, single pulse package dimensions unit : mm (typ) 7529-001 53012 tkim tc-00002765/d1003qa ts im ta-100958 sanyo semiconductors data sheet 2sk3707 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : en7706a product & package information ? package : to-220f-3sg ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./magazine marking electrical connection k3707 lot no. 1 3 2 1 : gate 2 : drain 3 : source sanyo : to-220f-3sg 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 ( 1.0) (0.84) detail-a a emc frame 2sk3707-1e
2sk3707 no.7706-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 100 v zero-gate voltage drain current i dss v ds = 100 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 10 a 11 17 s static drain-to-source on-state resistance r ds (on)1 i d = 10 a, v gs =10v 45 60 m r ds (on)2 i d = 10 a, v gs =4v 56 80 m input capacitance ciss v ds =20v, f=1mhz 2150 pf output capacitance coss 160 pf reverse transfer capacitance crss 110 pf turn-on delay time t d (on) see fig.2 19.5 ns rise time t r 30 ns turn-off delay time t d (off) 185 ns fall time t f 60 ns total gate charge qg v ds =50v, v gs =10v, i d =20a 44 nc gate-to-source charge qgs 7.8 nc gate-to-drain ?miller? charge qgd 9.8 nc diode forward voltage v sd i s =20a, v gs =0v 0.95 1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2sk3707-1e to-220f-3sg 50pcs./magazine pb free 50 10v 0v 50 rg v d d l 2sk3707 pw=10 s d.c. 1% p. g 50 g s d i d =10a r l =5 v dd =50v v ou t 2sk3707 v in 10v 0v v in
2sk3707 no.7706-3/7 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a i d -- v ds it06745 i d -- v gs it06746 0 4.5 0.5 0 0 40 35 30 25 3.0 0.5 1.0 1.5 2.0 2.5 20 15 10 5 0 40 35 1.0 1.5 2.0 2.5 3.0 3.5 4.0 30 25 20 15 10 5 10v 6v 8v 4v tc=25 c v gs =3v v ds =10v tc= --25 c --25 c 25 c 25 c 75 c tc=75 c r ds (on) -- v gs it06747 r ds (on) -- tc it06748 2 0 120 10 345678 --50 --25 0 25 50 75 100 125 150 9 100 80 60 40 20 110 90 70 50 30 10 0 120 100 80 60 40 20 110 90 70 50 30 10 i d =10a tc=75 c --25 c 25 c i d =10a, v gs =4v i d =10a, v gs =10v 0 5 100 1000 5 7 7 5 3 2 30 5152025 10 ciss, coss, crss -- v ds it06752 sw time -- i d it06751 it06750 0 0.3 0.6 0.9 1.2 1.5 0.001 0.01 100 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 i f -- v sd it06749 | y fs | -- i d 25 c --25 c 3 2 f=1mhz ciss coss crss tc=75 c 0.1 1.0 23 57 23 57 23 57 10 100 100 10 7 2 3 5 7 2 3 5 7 5 1.0 v ds =10v 25 c tc= --25 c 75 c 100 7 10 3 2 5 7 3 2 5 0.1 1.0 23 57 23 57 23 5 10 v dd =50v v gs =10v t d (off) t f t r t d (on) static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m case temperature, tc -- c drain current, i d -- a forward transfer admittance, | y fs | -- s diode forward voltage, v sd -- v forward drain current, i f -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf gate-to-source voltage, v gs -- v v gs =0v
2sk3707 no.7706-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a it16833 v gs -- qg it06753 05 0 1 2 3 4 5 6 7 8 50 40 45 35 10 9 10 15 20 25 30 v ds =50v i d =20a a s o 0.1 2 3 1.0 10 100 5 7 2 3 5 7 2 3 5 7 2 23 57 23 57 2 2 357 0.1 1.0 10 100 i d =20a operatuon in this area is limited by r ds (on). tc=25 c single pulse 10 s 100 s 1ms 100ms 10ms dc operation i dp =80a(pw 10 s) 0 0 20 40 0.5 60 1.5 1.0 80 100 120 2.0 2.5 140 160 p d -- ta it06755 p d -- tc it06756 0 0 20 40 5 60 10 15 80 100 120 20 25 30 140 160 ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w
2sk3707 no.7706-5/7 magazine speci cation 2sk3707-1e
2sk3707 no.7706-6/7 outline drawing 2sk3707-1e mass (g) unit 1.8 * for reference mm
2sk3707 ps no.7706-7/7 this catalog provides information as of may, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 2sk3707 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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